Metallized Ceramic Substrates

Professional manufacturer to custom metallized ceramic substrates based on your requirement since 2008. Grow your business with our OEM/ODM services.

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Customized Gold Plated Metallized Ceramic Substrate

Thick Film Alumina Metallized Ceramic Substrate

Metallized Ceramic Substrate with Nickle Plating

Alumina Metallized Ceramic Lid with Gold Plating

Metallized Aluminum Nitride Aln Ceramic Wafer

Services for Metallized Ceramic Substrate

You can get rich supports in metallized ceramic substrate, our capabilities and services are as follows :

Material：mainly Al2O3,AlN,Si3N4,BeO
Product type：Round, square, ring, triangle and other shapes
Production process: mainly tape casting
Surface finishing: grinding, laser cutting, metallization
Processing accuracy: dimensional accuracy can be controlled to 0.03mm

Meet Customized Requirements

Standard thicknesses of substrates include: 0.25mm, 0.30mm, 0.50mm, 0.635mm, 0.80mm, 1.0mm, etc. If you have customized requirements for other thicknesses and shapes, we can also meet them.

Metallized Ceramic Substrate Classification

Metallized ceramic substrate includes bare ceramic substrate and metal line layer, bare ceramic substrate connects internal and external heat dissipation channels and mechanical support role, metal line layer makes circuit interconnections to complete the electrical function.

According to the package structure and application requirements, metallized ceramic substrates can be divided into flat ceramic substrates and three-dimensional ceramic substrates two categories, Jinghui ceramic currently only does processing of flat ceramic substrates, which are categorized as follows:

TFC

Thin Film Ceramic Substrate, a metal layer is deposited directly on the surface of the ceramic substrate using a sputtering process.

The small thickness of the metal layer on the surface of the TFC substrate (generally less than 1 μm) allows the preparation of ceramic substrates with high graphic accuracy (line width/spacing less than 10 μm), which are mainly used for packaging of small-current devices in the field of laser and optical communications.

TPC

Thick Printing Ceramic Substrate, is prepared by screen printing a metal paste onto a ceramic substrate, dried and sintered at high temperature.

The metal line width/spacing of the TFC substrate is generally greater than 100 μm, and the thickness of the metal line layer is generally 10 μm ~ 20 μm, which is only used in the packaging of electronic devices (e.g., automotive electronics) that do not require a high level of line accuracy.

DBC

Direct Bonded Copper Ceramic Substrate， oxygen between the copper foil and substrate to form a Cu/O eutectic phase at 1065°C.

Ceramics and copper have good thermal conductivity and high eutectic bonding strength, and DBC substrates have high thermal stability and have been widely used in device packaging heat dissipation.

AMB

Active Metal Brazing Ceramic Substrate, modification of the DBC process, utilizing reactive solder to bond the copper foil to the ceramic substrate.

AMB technology is getting more and more attention from the industry, especially with the use of low-temperature active solder.

DPC

Direct Plated Copper Ceramic Substrate, surface deposition of metal seed layer, plating thickening, surface treatment.

The DPC substrate is a true ceramic circuit board with high graphic precision and vertical interconnections.

LAM

Laser Activated Metallization Ceramic Substrate, heat activated surfaces with a laser beam, followed by electroplating or chemical plating.

Difficult to mass production, resulting in extremely high prices, is currently mainly used in the aerospace field shaped ceramic heat sink parts processing.

Main Characteristics of metallized Ceramic substrates

Semiconductor devices gradually to high-power, miniaturization, integration, multi-function and other directions, the performance of the package substrate also put forward higher requirements. Metallized ceramic substrates have some common performance requirements to be achieved.

high thermal conductivity

Current power semiconductor devices are thermoelectric separation package, most of the heat generated by the device through the package substrate spread out, good thermal conductivity of the substrate can make the chip from thermal damage.

Thermal Expansion Coefficient Matching

The chip is directly mounted on the package substrate, matching the coefficients of thermal expansion of the two will reduce the thermal stress of the chip and improve the reliability of the device.