JINGHUI CERAMIC

Metallized Aluminum Nitride Ceramic Wafer

Additional information

Specification

Customized

Material

Aluminum Nitride (AlN) Ceramic

Surface Metallization Process

What we use most is the Mo-Mn Method and the Activated Mo-Mn Method, followed by the Silver Firing Method and the Nickel Plating Method. Please consult us for more metallization methods.

Feature

Strong heat dissipation capabilities

Application

High-power semiconductor devices, Microwave radio frequency devices, Power module, LED packaging, etc.

Transport Package

Vacuum Packaging

Product Introduction

Metallized aluminum nitride (AlN) ceramic wafer is a special circular ceramic substrate, which is composed of aluminum nitride ceramic substrate and metallized layer. Aluminum nitride ceramic substrate is a ceramic material with excellent thermal conductivity, high hardness and excellent electrical insulation properties.

The metallized layer is formed by coating a layer of metal material, such as copper, silver or gold, on the aluminum nitride ceramic substrate, and then undergoes a special processing technology. The metallization layer can provide excellent electrical conductivity and solderability, so that the metallized aluminum nitride ceramic original sheet can be reliably electrically connected with electronic devices.

The diameter and thickness of metallized aluminum nitride ceramic discs can be customized according to the needs of specific applications. This kind of wafer has a wide range of applications in high-power electronic devices, microwave radio frequency devices and power modules. Its excellent thermal conductivity, high hardness and excellent electrical insulation properties make it ideal for heat dissipation and electrical connection of high-power electronic devices. Metallized aluminum nitride ceramic wafers can withstand high power and high frequency operating environments and improve device performance and reliability.

 

 

Product Application

The following are some application examples of metallized aluminum nitride ceramic wafers:

1. High-power semiconductor devices: Metallized aluminum nitride ceramic wafers can be used as heat dissipation bases for heat dissipation of high-power semiconductor devices. It has excellent thermal conductivity and high hardness, which can effectively conduct the heat generated by the device to the heat dissipation system to prevent the device from overheating.

2. Microwave radio frequency devices: Metallized aluminum nitride ceramic discs can be used as the substrate of microwave radio frequency devices. Its high thermal conductivity and excellent electrical insulation properties can provide stable signal transmission and good electrical isolation.

3. Power module: Metallized aluminum nitride round ceramic plates can be used in the manufacture of power modules. Its high hardness and excellent electrical insulation properties enable it to withstand high voltage and high current working environments, improving the performance and reliability of power modules.

4. LED packaging: Metallized aluminum nitride circular ceramic substrate can be used as the substrate in the LED packaging process. Its high thermal conductivity can effectively dissipate the heat generated by the LED and prolong the service life of the LED.

 

Aluminum Nitride Ceramic Substrates for High Power LED Lighting

 

 

Will Ceramic Substrates Replace Aluminum Substrates?

Al CCL substrates and ceramic substrates are commonly used circuit board materials with good thermal conductivity, but there are differences in their material properties and application fields.

The Al CCL substrate is composed of a circuit layer, an insulating layer and a metal base layer. Its working principle is roughly that the surface of the power device is mounted on the circuit layer. The heat generated by the device during operation is transferred to the metal base layer through the insulating layer, and then the heat is transferred out by the metal base layer to achieve heat dissipation of the device.

The ceramic substrate consists of a circuit layer and a metal base layer, eliminating the need for an insulating layer. Its working principle is roughly that the surface of the power device is mounted on the circuit layer, and the heat generated during the operation of the device is directly transferred from the metal base layer to achieve heat dissipation for the device.

Compared with ceramic substrates, Al CCL substrates have the advantages of lower manufacturing cost, simple manufacturing process, and good processing, and are suitable for low-power applications, such as ordinary circuit boards, LED drive circuits, power adapters, etc.

Ceramic substrates have good insulation and thermal conductivity and do not require insulating layers, so they are widely used in high-reliability, high-precision and high-demand fields, such as semiconductor packaging, MEMS, sensors, radio frequency devices, etc.

As far as the field of LED lamps is concerned, Al CCL substrates are generally used, which can conduct heat quickly. However, if it involves high-power LED modules and requires strong heat dissipation capabilities, ceramic substrates are needed to replace them, which can avoid short-circuit damage caused by insufficient heat dissipation.

Therefore, both Al CCL substrate and ceramic substrate have certain markets and application fields. As high-performance and high-demand products become more and more popular in the market, ceramic substrates will replace Al CCL substrates in more and more fields and become the new favorite of electronic manufacturing.

 

 

Why Choose Us

Jinghui has advanced surface treatment process of ceramic substrates and has mass production capacity. Our products have been verified by the market for many years, their reliability and stability have been unanimously recognized by customers, and their quality has reached the leading level in the market.

 

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